savantic semiconductor product specification silicon npn power transistors 2SC1880 d escription with to-220c package darlington high dc current gain applications for industrial use pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current-dc 2 a i cm collector current-pulse 4 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC1880 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =30ma, i b =0 120 v v (br)cbo collector-base breakdown voltage i c =1ma, i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =50ma, i c =0 5 v v cesat collector-emitter saturation voltage i c =2a ,i b =8ma 1.2 v i cbo collector cut-off current v cb =100v, i e =0 0.1 ma i ceo collector cut-off current v ce =100v, i b =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 50 ma h fe dc current gain i c =2a ; v ce =2v 1000
savantic semiconductor product specification 3 silicon npn power transistors 2SC1880 package outline fig.2 outline dimensions
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